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    • ISSN: 1793-821X
    • Frequency: Quarterly (2013-2014); Bimonthly (Since 2015)
    • DOI: 10.18178/JOCET
    • Editor-in-Chief: Prof. Haider F. Abdul Amir
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School of Science and Technology Universiti Malaysia Sabah, Malaysia.
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JOCET 2016 Vol.4(4): 241-244 ISSN: 1793-821X
DOI: 10.7763/JOCET.2016.V4.289

Diamond Photovoltaic Cell Development

N. B. Rodionov, V. N. Amosov, S. A. Meshchaninov, and A. F. Pal
Abstract—A synthetic diamond based heterostructure (p-i-structure) is examined as a photovoltaic cell. P-type diamond heavily doped with boron was used as a substrate. A CVD IIa-type diamond film of 50 mkm thickness was deposited on the substrate. A technology of semi-transparent entrance contact fabrication was developed. A current-voltage characteristic (I-V) of the wide band gap diamond photovoltaic cell were measured. For the case of UV irradiation the comparison of I-V for ordinary and semi-transparent contacts was performed. Experimental data allowed estimating of alpha, x-ray and UV radiation conversion efficiency to be in the range5÷7%.

Index Terms—Boron doped diamond, CVD diamond, diamond heterostructures, photovoltaic cell, semi-transparent contact.

The authors are with the State Research Center of Russian Federation Troitsk Institute for Innovation & Fusion Research, Troitsk, Moscow, Russia, 142190 (e-mail: rodionovnb@gmail.com).

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Cite:N. B. Rodionov, V. N. Amosov, S. A. Meshchaninov, and A. F. Pal, "Diamond Photovoltaic Cell Development," Journal of Clean Energy Technologies vol. 4, no. 4, pp. 241-244, 2016.

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